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2SJ673
ELECTRICAL CHARACTERISTICS (T A = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Note
Forward Transfer Admittance
SYMBOL
I DSS
I GSS
V GS(off)
| y fs |
TEST CONDITIONS
V DS = ? 60 V, V GS = 0 V
V GS = m 20 V, V DS = 0 V
V DS = ? 10 V, I D = ? 1 mA
V DS = ? 10 V, I D = ? 18 A
MIN.
? 1.5
22
TYP.
? 2.0
MAX.
? 10
m 10
? 2.5
UNIT
μ A
μ A
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = ? 10 V, I D = ? 18 A
V GS = ? 4.0 V, I D = ? 18 A
V DS = ? 10 V
V GS = 0 V
f = 1 MHz
V DD = ? 30 V, I D = ? 18 A
V GS = ? 10 V
R G = 0 ?
17
22
4600
820
330
14
14
130
20
31
m ?
m ?
pF
pF
pF
ns
ns
ns
Fall Time
t f
50
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = ? 48 V
V GS = ? 10 V
I D = ? 36 A
87
15
22
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = ? 36 A, V GS = 0 V
I F = ? 36 A, V GS = 0 V
di/dt = 100 A/ μ s
1.0
52
84
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = ? 20 → 0 V
R G = 25 ?
50 ?
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS ( ? )
10%
0
V GS
90%
V DS ( ? )
?
I D
I AS
BV DSS
V DS
V GS ( ? )
0
V DS
Wave Form
V DS
0
90%
10% 10%
90%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = ? 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D17210EJ1V0DS
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